Extreme ultraviolet photoemission of a tin-based photoresist

Tin is a suitable element for inclusion in extreme ultraviolet photoresists because of its relatively high-absorption cross section at 92 eV. The electrons emitted after photon absorption are expected to generate secondary the solid film. In this way, several pathways lead reactive species that cause solubility switch. Here, we report photoelectron spectra tin oxo cage over energy range 60–150 eV, and relative yields photoelectrons from valence band resist, Sn 4d orbitals, inelastically scattered electrons. experimental excitation differ considerably those predicted by commonly used database values, combined computed subshell spectra: maximum efficiency ionization both metal occurs near industrially relevant EUV wavelength 13.5 nm.