External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers
نویسندگان
چکیده
We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze possible correlation between acid's electronegativity GaN surface band bending, two types acids, n-octylphosphonic (OPA) 1H,1H,2H,2H-perfluorooctanephosphonic (PFOPA), are grafted oxidized GaN$(1\bar{1}00)$ layers as well nanowires. The resulting hybrid inorganic/organic heterostructures investigated by X-ray photoemission photoluminescence spectroscopy. work function is changed significantly grafting evidencing formation dense self-assembled monolayers. Regardless orientation, both acids impact bending. A dependence acids' is, however, only observed for surface, indicating a relatively low density states favorable alignment oxide electronic states. Regarding optical properties, covalent bonding PFOPA OPA nanowires affect external quantum efficiency, especially in nanowire case due to large surface-to-volume ratio. variation efficiency related modication internal electric fields These results demonstrate potential phosphonate chemistry GaN, which could be exploited selective sensing applications.
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ژورنال
عنوان ژورنال: ACS Applied Materials & Interfaces
سال: 2021
ISSN: ['1944-8244', '1944-8252']
DOI: https://doi.org/10.1021/acsami.0c17519