Exploration of Electron Confinement in Multiple Quantum Well Using III-V Semiconductor Materials

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electron Spin Relaxation in a Semiconductor Quantum Well

A fully microscopic theory of electron spin relaxation by the D’yakonov-Perel’ type spin-orbit coupling is developed for a semiconductor quantum well in an ambient magnetic field applied perpendicular to the plane of the well. We derive Bloch equations for an electron spin in the well and determine explicit microscopic expressions for the spin relaxation times. The dependencies of the electron ...

متن کامل

Hybrid III-V Silicon Quantum Dot and Quantum Well Lasers

The silicon photonics field is advancing rapidly, with many new devices demonstrated recently [1]. Demonstrations have shown significantly improved performance that is now approaching that of devices on native InP substrates. In addition to the many passive devices, including AWGs, isolators, and circulators, active devices including lasers, modulators, amplifiers and photodetectors (Fig. 1) ar...

متن کامل

Nano-optoelectronics Based on Iii-v Semiconductor Quantum Dots

In this talk, I discuss the new physics and device applications provided by self-assembled quantum dots, in particular, with III-V compound semiconductor materials system. The quantum dots are the structures three-dimensionally confined and therefore provide quasi zero-dimensional electron gas system, where novel physics can be studied and improved device performance can be achieved, in particu...

متن کامل

Bandgap mapping for III-V quantum well by electron spectroscopy imaging.

The concept of 'bandgap mapping' was proposed originally to map the inhomogeneity of band energy in III-V semiconductors with a spatial resolution of a few nanometres in a scanning transmission electron microscope with the focus beam mode. In this paper, several techniques were developed to demonstrate the possibility to map the distribution of bandgap energies for GaN/AlN quantum-well structur...

متن کامل

Inelastic lifetimes of confined two-component electron systems in semiconductor quantum-wire and quantum-well structures.

We calculate Coulomb scattering lifetimes of electrons in two-subband quantum wires and in double-layer quantum wells by obtaining the quasiparticle self-energy within the framework of the random-phase approximation for the dynamical dielectric function. We show that, in contrast to a single-subband quantum wire, the scattering rate in a two-subband quantum wire contains contributions from both...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Material Science Research India

سال: 2008

ISSN: 0973-3469,2394-0565

DOI: 10.13005/msri/050132