Exfoliation procedure-dependent optical properties of solution deposited MoS2 films

Abstract The development of high-precision large-area optical coatings and devices comprising low-dimensional materials hinges on scalable solution-based manufacturability with control over exfoliation procedure-dependent effects. As such, it is critical to understand the influence technique-induced transition metal dichalcogenide (TMDC) properties that impact design, performance, integration advanced devices. Here, we examine semiconducting MoS 2 films from formulations four prominent approaches: solvent-mediated exfoliation, chemical phase reconversion, redox native exfoliation. resulting exhibit distinct refractive indices ( n ), extinction coefficients k dielectric functions (ε 1 ε absorption (α). For example, a large index contrast Δ ≈ 2.3 observed. These procedures related chemistries produce different exfoliated flake dimensions, impurities, carrier doping, lattice strain properties. First-principles calculations further confirm defects doping characteristics Overall, incomplete reconfiguration (from 1T mixed crystalline 2H amorphous phases), vacancies, intraflake strain, Mo oxidation largely contribute observed differences in reported findings highlight need for controlled effects as well opportunity continued of, improvement to, liquid methodologies. Such processing-induced present compelling routes engineer TMDC toward next-generation high-performance mirrors, narrow bandpass filters, wavelength-tailored absorbers.