منابع مشابه
InGaAs finFETs for future CMOS
The last few years have witnessed an explosion of interest in exploring the use of III-Vs to advance logic CMOS beyond the point of diminishing returns for silicon technology. There is now a tantalizing possibility that these compound semiconductors will enter the CMOS roadmap. If they do, the benefits could be huge – they could extend Moore’s Law by two or three more nodes, a huge contribution...
متن کاملImpact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or InGaAs cores. We have calculated phonon-limited mobility and transfer characteristics for a variety of cross-sections at low and high drain bias. Th...
متن کاملExtraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs
A compact set of equations based on the multiple subbands quasi-ballistic transport theory is developed, and is used to investigate the channel electron effective mobility in recently reported In0 .53Ga0 .47As/Al2O3 tri-gate n-FinFET. The extracted electron effective mobility μn is around 370 cm2 /V·s at low Vg−Vth bias at room temperature and decreases with increasing Vg , and increases with i...
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wileyonlinelibrary.com recent rich advancements in strain engineering, [ 2 ] metal gate stack with high-k dielectrics, [ 3 ] and transistor architecture, [ 4 ] up to the development of Si FinFET devices adopted in current CMOS technology. It is expected that downscaling of Si-based technology will eventually reach its physical limits below 10 nm technology node, a bottleneck that research now t...
متن کاملEnhanced Circuit Densities in Epitaxially Defined FinFETs (EDFinFETs) over FinFETs
—FinFET technology is prone to suffer from Line Edge Roughness (LER) based VT variation with scaling. To address this, we proposed an Epitaxially Defined (ED) FinFET (EDFinFET) as an alternate to FinFET architecture for 10 nm node and beyond. We showed by statistical simulations that EDFinFET reduces LER based VT variability by 90% and overall variability by 59%. However, EDFinFET consists of w...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2018
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2018.2806559