Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors

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Excess low-frequency noise in AlGaNÕGaN-based high-electron-mobility transistors

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2002

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.1463202