Evolution of pyramid morphology during InAs(001) homoepitaxy

Growth mode evolution during homoepitaxy of GaAs (001)

Thin film deposition has become a critical technology for the advancement of modern electronics. A large number of artificial heterostructures have been produced by using various growth techniques. Molecular beam epitaxy (MBE) is particularly important because it affords monoatomic layer thickness control over films growing from the vapor phase at relatively low temperatures under supersaturati...

Coarsening of Unstable Surface Features during Fe(001) Homoepitaxy.

Coarsening of Unstable Surface Features during Fe(001) Homoepitaxy Joseph A. Stroscio, D. T. Pierce, M. D. Stiles, A. Zangwill† L. M. Sander Department of Physics, University of Michigan Ann Arbor, MI 48109 The evolution of the surface profile during homoepitaxial growth of Fe(001) is studied by scanning tunnelling microscopy and reflection high energy electron diffraction. The observed morphol...

Large scale surface structure formed during GaAs (001) homoepitaxy

Atomic force microscopy studies have been performed on GaAs (001) homoepitaxy Rlrns grown by molecular beam epitaxy. Multilayered features are seen to evolve when the growth conditions favor island nucleation. As the epilayer thickness is increased these features grow in all dimensions but the angle of inclination remains approximately constant at 1”. The mounding does not occur on surfaces gro...

Growth coalescence shapes for islands during metal (100) homoepitaxy

During submonolayer homoepitaxy, instability in the shapes of growing two-dimensional islands can develop due to the diffusion-limited aggregation of deposited adatoms at their edges. However, in metal (100) systems, periphery diffusion is typically efficient, quenching this shape instability, and resulting in simple near-square or near-rectangular shapes of isolated islands. Despite this featu...

Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE