Evaluation of the turn‐off transient controllability for high‐power IGBT modules
نویسندگان
چکیده
The efficient and flexible conversion of electrical energy is increasingly accomplished by megawatt insulated gate bipolar transistor (IGBT) modules. Their dynamic performance influenced the driver control, operating points switching loop parasitics, which are crucial to their optimized operational behaviours, efficiency field reliability. This paper investigates controllability transient voltage current slopes IGBT modules during turn-off transitions proposes an assessment method accordingly. Firstly, causal relationship characteristic variations investigated analytically. Then, major factors impacting analysed validated, including charge carrier profile, (i.e. load voltage, current, junction temperature), resistance. Finally, using MOS-channel point on calibrated waveform proposed for evaluation, can guide IGBT, driver, converter design.
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ژورنال
عنوان ژورنال: Iet Power Electronics
سال: 2022
ISSN: ['1755-4535', '1755-4543']
DOI: https://doi.org/10.1049/pel2.12255