Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
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Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
Author details V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev 03680, Ukraine. Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, AR 72701, USA. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska str. 29/37, 01-142 Warsaw, Poland. Institute of Physics, Polish Aca...
متن کاملInfrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n+/n0/n+-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. ...
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Electron paramagnetic resonance ~EPR! and optically detected magnetic resonance ~ODMR! experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5310 to 5.0310 cm. The samples were also characterized by secondary-ion-mass spectroscopy ~SIMS!, temperature-dependent Hall effect, and low-temperature photoluminescence ~PL! measurements. EPR at 9 GHz on the conductive fil...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2017
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-017-2227-1