Epitaxial lift-off method for GaAs solar cells with high Al content AlGaAs window layer

Abstract The epitaxial GaAs substrate lift-off (ELO) technique is widely used to produce thin film III–V semiconductor optoelectronic devices. However, the hydrofluoric (HF) acid in process forbids incorporation of active AlGaAs device layers with high Al content due its selective etching. In this work, a new ELO method presented, which allows for protection against HF attack. here prepare and analyse solar cells containing 0.85 Ga 0.15 As window layer. We employ sacrificial buffer perimeter pre-processing that covers exposed edges back contact metals electroplated Cu. A comparison epitaxially lifted identical prepared by etching demonstrates photovoltaic figures merit confirms viability approach. addition applications photovoltaics, can be applied solid-state lasers single-photon emitters employing AlGaAs-based Bragg reflectors, among other