Enhanced Raman intensity in ZnS planar and channel waveguide structures via carbon ion implantation

Enhanced Life Ion Source For Germanium And Carbon Ion Implantation

Germanium and carbon ions represent a significant portion of total ion implantation steps in the process flow. Very often ion source materials that used to produce ions are chemically aggressive, especially at higher temperatures, and result in fast ion source performance degradation and a very limited lifetime. GeF4 and CO2 are commonly used to generate germanium and carbon beams. In the case ...

Ionization‐enhanced diffusion: Ion implantation in semiconductors

Raman intensity of single-wall carbon nanotubes

Using nonresonant bond-polarization theory, the Raman intensity of a single-wall carbon nanotube is calculated as a function of the polarization of light and the chirality of the carbon nanotube. The force-constant tensor for calculating phonon dispersion relations in the nanotubes is scaled from those for two-dimensional graphite. The calculated Raman spectra do not depend much on the chiralit...

Silicon Nitride Background in Nanophotonic Waveguide Enhanced Raman Spectroscopy

Recent studies have shown that evanescent Raman spectroscopy using a silicon nitride (SiN) nanophotonic waveguide platform has higher signal enhancement when compared to free-space systems. However, signal-to-noise ratio from the waveguide at a low analyte concentration is constrained by the shot-noise from the background light originating from the waveguide itself. Hence, understanding the ori...

Raman scattering in b-ZnS

J. Serrano, A. Cantarero, M. Cardona, N. Garro, R. Lauck, R. E. Tallman, T. M. Ritter, and B. A. Weinstein Max Planck Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany Institut de Ciència dels Materials, Universitat de València, P.O. Box 22085, E-46071 Valencia, Spain Department of Physics, SUNY at Buffalo, Buffalo, New York 14260, USA Department of Chemistry and P...