Enhanced persistent photoconductivity inδ-doped LaAlO3/SrTiO3heterostructures
نویسندگان
چکیده
منابع مشابه
X-ray induced persistent photoconductivity in Si-doped Al0.35Ga0.65As
We demonstrate that x-ray irradiation can be used to induce an insulator–metal transition in Si-doped Al0.35Ga0.65As, a semiconductor with DX centers. The excitation mechanism of the DX centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident x-ray energy exhibits an edge both at the Ga and As K ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2014
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.89.125127