Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer
نویسندگان
چکیده
منابع مشابه
Origin of efficiency droop in GaN-based light-emitting diodes
The efficiency droop in GaInN/GaN multiple-quantum well MQW light-emitting diodes is investigated. Measurements show that the efficiency droop, occurring under high injection conditions, is unrelated to junction temperature. Furthermore, the photoluminescence output as a function of excitation power shows no droop, indicating that the droop is not related to MQW efficiency but rather to the rec...
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Nitride-based light-emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN-based LEDs. Several explanations of the efficiency droop have been proposed in recent years, but none is widely accepted. Th...
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In this study, high-performance InGaN-based green light-emitting diodes (LEDs) with a quaternary InAlGaN/GaN superlattice electron blocking layer (QSL-EBL) have been demonstrated. The band structural simulation was employed to investigate the electrostatic field and carriers distribution, show that the efficiency and droop behavior can be intensively improved by using a QSL-EBL in LEDs. The QSL...
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The effect of strongly-imbalanced carrier concentration and mobility on efficiency droop is studied by comparing the onset voltage of high injection, the onset current density of the droop, and the magnitude of the droop, as well as their temperature dependence, of GaInN-based blue and green light-emitting diodes (LEDs). An n-to-p asymmetry factor is defined as σn/σp, and was found to be 17.1 f...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2013
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4817800