Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers
نویسندگان
چکیده
منابع مشابه
Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers
subwavelength aluminum wire-grid polarizers Ming Ma, David S. Meyaard, Qifeng Shan, Jaehee Cho, E. Fred Schubert, Gi Bum Kim, Min-Ho Kim, and Cheolsoo Sone Future Chips Constellation, Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Poly...
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2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. ...
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We demonstrate the high efficiency of InGaN/GaN multiple quantum wells (MQWs) light-emitting diode (LED) grown on the electrochemically etched nanoporous (NP) GaN. The photoluminescence (PL) and Raman spectra show that the LEDs with NP GaN have a strong carrier localization effect resulting from the relaxed strain and reduced defect density in MQWs. Also, the finite-difference time-domain (FDTD...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2011
ISSN: 1094-4087
DOI: 10.1364/oe.19.023429