ELIMINATION OF DISLOCATIONS IN GaAs SINGLE CRYSTALS

Dislocations in Sodium-Chloride Crystals

Distributions of dislocations in sodium chloride crystals, which were induced by heat treatment or working, were investigated, using a newly developed etchant. The crystals, which were annealed above 3 0 0 ° C , showed reduced dislocation densities and rearranged dislocation patterns. By raising the temperature to 600 ° C or 700 ° C many elongated subboundaries or subboundaries arranged in the ...

Dislocations in crystals of silver halides

Formation of misfit dislocations in strained-layer GaAs/In

The Open University's repository of research publications and other research outputs Formation of misfit dislocations in strained-layer GaAs/In x Ga 1–x As/GaAs heterostructures during postfabrication thermal processing Journal Article (2003). Formation of misfit dislocations in strained-layer GaAs/InxGa1–xAs/GaAs heterostructures during postfabrication thermal processing. It is demonstrated th...

The Role of Geometrically Necessary Dislocations in Cantilever Beam Bending Experiments of Single Crystals

The mechanical behavior of single crystalline, micro-sized copper is investigated in the context of cantilever beam bending experiments. Particular focus is on the role of geometrically necessary dislocations (GNDs) during bending-dominated load conditions and their impact on the characteristic bending size effect. Three different sample sizes are considered in this work with main variation in ...

Copy D an Experimental Study of the Mobility of Edge Dislocations in Pure Copper Single Crystals

The velocity of selectively-introduced edge dislocations in 99.999 percent pure copper crystals has been measured as a function of stress at temperatures from 66°K to 373°K by means of a torsion technique. The range of resolved shear stress was 0 to 15 megadynes/cm2 for seven temperatures (66°K, 74°K, 83°K, 123°K, 173°K, 296 °K, 373°K). Dislocation mobility is characterized by two distinct feat...