Eliminating Leakage Current in Thin?Film Transistor of Solution?Processed Organic Material Stack for Large?Scale Low?Power Integration

For organic thin-film transistors (OTFTs) made of solution processed stacks semiconductor and dielectric materials, it is a grand challenge to eliminate the leakage current paths. With top-gate bottom-contact structure, this work introduces strong dipole interfacial layer self-assembled monolayer (SAM) molecules at metal-semiconductor contacts suppress minority carrier injection for low stable operation, while not affecting majority injection. Both gate insulator (GI) parasitic in device architecture are also effectively suppressed with sputtering-resistant polymer GI photolith patterned OSC islands, respectively. The devices present decent mobility typical value 1.98 cm2 V–1 s–1, record-low 10–18 A µm?1 large ON/OFF ratio (>1010) wide voltage range (100 V), reaching theoretical limit best level inorganic counterparts despite much lower processing temperature (120 °C). Manufacturability material stack verified on 200 mm × substrate fabricated 4.7 in. active-matrix light-emitting diode display, integrating more than 150 000 OTFTs, can be operated ultra-low frame-rate (0.1 Hz) power saving.