Elevated transition temperature in Ge doped VO2 thin films
نویسندگان
چکیده
منابع مشابه
Metal-insulator transition characteristics of VO2 thin films grown on Ge„100... single crystals
Phase transitions exhibited by correlated oxides could be of potential relevance to the emerging field of oxide electronics. We report on the synthesis of high-quality VO2 thin films grown on single crystal Ge 100 substrates by physical vapor deposition and their metal-insulator transition MIT properties. Thermally triggered MIT is demonstrated with nearly three orders of magnitude resistance c...
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VO2 is a transition metal oxide in which complex electronic phases appear near the metal-to-insulator transition due to electron correlation and electron–lattice interactions. This system is characterized by a metal-to-insulator transition (MIT) at around 341 K. The metal (high T) phase is tetragonal while the insulator (low T) phase is monoclinic and the resistivity changes at the MIT by about...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2017
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4995965