Electrophysical characteristics of power MOSFETs additionally implanted with nitrogen ions

Analysis of Halo Implanted MOSFETs

MOSFETs with heavily doped regions at one or both ends of the channel exhibit qualitative differences in electrical behavior compared to devices with laterally uniform channel doping. These differences include a distinct peakiness in the transconductance near threshold, asymmetries in capacitances, and a surprising decrease in the statistical variation of the peak gain factor as channel length ...

Gate Drive Characteristics and Requirements for Power MOSFETs

Correlation of Interface Characteristics to Electron Mobility in Channel- implanted 4H-SiC MOSFETs

To study mobility limiting mechanisms in (0001) 4H-SiC, lateral n-channel MOSFETs in p-implanted wells on n-type epitaxial layers were manufactured and additionally selectively shallow implanted with different nitrogen (N) doses in the channel region. The mobility was found to be limited by Columbic scattering at low electric fields. Further surface roughness scattering was considered as a poss...

Current Sensing Power MOSFETs

SENSEFET PRODUCT Current sensing power MOSFETs provide a highly effective way of measuring load current in power conditioning circuits. Conceptually simple in nature, these devices split load current into power and sense components, and thereby allow signal level resistors to be used for sampling. Since this technique results in higher efficiency and lower costs than competing alternatives, und...

PARALLELING POWER MOSFETs

Whenever devices are operated in parallel, due consideration should be given to the sharing between devices to ensure that the individual units are operated within their limits. Items that must be considered to successfully parallel MOSFETs are: gate circuitry, layout considerations, current unbalance, and temperature unbalance. This application note covers these topics and provides guidelines ...