Electronic structure of vacancy-type defects in hexagonal boron nitride

نویسندگان

چکیده

The electronic structure of vacancy-type defects in hexagonal boron nitride (h-BN) synthesized by chemical vapor deposition, promising for microelectronics, is studied. research carried out using X-ray photoelectron spectroscopy and a simulation within the density functional theory. It shown that h-BN bombardment with argon ions leads not only to near-surface layer cleaning from organic pollutants, but also generation high intrinsic concentration, mainly boron-nitrogen divacances. greater divacances concentration is, longer time is. divacansion significantly more energetically favorable defect than isolated nitrogen vacancies. concluded most probable diamagnetic capable participating localization and, as consequence, charge transport films divacancy. Keywords: (BN), (XPS), quantum simulation, theory (DFT).

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ژورنال

عنوان ژورنال: Fizika tverdogo tela

سال: 2022

ISSN: ['0367-3294', '1726-7498']

DOI: https://doi.org/10.21883/pss.2022.07.54582.308