منابع مشابه
investigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولDoping Induced Structural Stability and Electronic Properties of GaN Nanotubes
The present paper discusses the effect of manganese doping on the structural stability and electronic band gap of chiral (2, 1), armchair (3, 3), and zigzag ((6, 0) and (10, 0)) single walled GaN nanotube by using density functional theory based Atomistix Toolkit (ATK) Virtual NanoLab (VNL). The structural stability has been analyzed in terms of minimum ground state total energy, binding, and f...
متن کاملThe Electronic Structure of Nonpolyhex Carbon Nanotubes
Generalizing the folding method to any periodic two-dimensional planar carbon structures we have calculated the corresponding electronic structures in the framework of the one orbital one site tight-binding (Bloch-Hückel) method by solving the eigenvalue problems in a numerical way. We discussed the metallic or the nonmetallic behavior of the nanotubes by applying the folding vectors of paramet...
متن کاملElectronic structure of polychiral carbon nanotubes
Most of the works devoted so far to the electronic band structure of multi-wall nanotubes have been restricted to the case where the individual layers have the same helicity. By comparison, much less is known on the electronic properties of multiwall nanotubes that mix different helicities. These are interesting systems, however, since they can be composed of both metallic and semiconducting la...
متن کاملGaN Nanorods and Nanotubes 35 Epitaxial Growth of ZnO-GaN Hetero-Nanorods and GaN Nanotubes
Various methods to grow high quality and perfectly arranged ZnO nanorods have been reported over the recent years (see, e.g., [1, 2] and references therein). However, due to the material properties of ZnO and its related compounds, there are many restrictions in designing more complex heterostructures or even devices based on such nanorods. In particular p-type doping of ZnO is still a big, yet...
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ژورنال
عنوان ژورنال: Comptes Rendus Chimie
سال: 2017
ISSN: 1631-0748
DOI: 10.1016/j.crci.2016.05.023