Electronic Energies in Delta Doped AlGaAs/GaAs Heterostuctures
نویسندگان
چکیده
منابع مشابه
Calculation of electronic properties in AlxGa1-x delta-doped systems
The calculation of the electronic energy levels of n-type d-doped quantum wells in a AlGaAs matrix is presented. Many-body effects in the two-dimensional electron gas are taken into account by using a local-density Thomas-Fermi approach. Special consideration is taken into when the values of the Al molar fraction xR0.45, and the ternary alloy becomes an indirect gap material. The results sugges...
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ژورنال
عنوان ژورنال: American Journal of Applied Sciences
سال: 2008
ISSN: 1546-9239
DOI: 10.3844/ajassp.2008.435.439