Electron mobility enhancement in <i>n</i>-GaN under Ohmic-metal
نویسندگان
چکیده
We investigated the electron transport properties of n-GaN under an Ohmic-metal. Hall measurement results were compared for (A) before Ti-based metal deposition, (B) after deposition but annealing, (C) Ohmic and (D) Ohmic-metal removal, where multi-probe-Hall device measurements are required (C), while others, (A), (B), (D), can be characterized by conventional measurements. The elucidated that, Ohmic-metal, concentration is increased mobility enhanced in comparison with those other cases, (D). indicates that high-density doping takes place annealing. However, not observed removal. Moreover, enhancement cannot explained donor ionized impurity scattering. These suggest donors formed, polarization owing to strain from place. From theoretical calculations, we clarified increase density without leads suppression scattering consequently enhancement.
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2023
ISSN: ['2158-3226']
DOI: https://doi.org/10.1063/5.0147137