Electron and Hole Mobility of SnO2 from Full-Band Electron–Phonon and Ionized Impurity Scattering Computations

Mobility is a key parameter for SnO2, which extensively studied as practical transparent oxide n-type semiconductor. In experiments, the mobility of electrons in bulk SnO2 single crystals varies from 70 to 260 cm2V-1s-1 at room temperature. Here, we calculate limited by electron-phonon and ionized impurity scattering coupling Boltzmann transport equation with density functional theory electronic structures. The linearized solved numerically beyond commonly employed constant relaxation-time approximation taking into account all energy momentum dependencies rates. Acoustic deformation potential polar optical phonons are considered scattering, where phonon found be main factor determines both holes calculated phonon-limited electron 265 cm2V-1s-1, whereas that 7.6 cm2V-1s-1. We present function carrier concentration, shows upper limit. large difference between mobilities p-type result different effective masses holes.