Electrically tunable lateral spin-valve transistor based on bilayer CrI3

Abstract The recent discovery of two-dimensional (2D) magnetic materials has opened new frontiers for the design nanoscale spintronic devices. Among 2D nano-magnets, bilayer CrI 3 outstands its antiferromagnetic interlayer coupling and electrically-mediated state control. Here, leveraging on electrical properties, we propose a lateral spin-valve transistor based , where spin transport is fully controlled via an external electric field. proposed proof-of-concept device, working in ballistic regime, able to both filter (>99%) select ON/OFF current up ratio ≈10 2 using double split-gate architecture. Our results obtained exploiting multiscale approach ranging from first-principles out-of-equilibrium calculations, open unexplored paths towards exploitation or related as promising platform future electrically tunable, compact, scalable