Electrically injected GaAsBi/GaAs single quantum well laser diodes
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چکیده
منابع مشابه
Temperature and current dependent capture of injected carriers in InGaN single-quantum-well light-emitting diodes
Temperature and injection current dependence of electroluminescence (EL) spectral intensity of the super-bright InGaN single quantum well (SQW) light emitting diodes (LED’s) has been carefully investigated over a wide temperature range (T = 15-300 K) and as a function of injection current level (0.1-10 mA). It is found that, when T is decreased slightly to 140 K, the EL intensity efficiently in...
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.............................................................................................................................. ii Acknowledgements ............................................................................................................ iii Table of
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In a recent paper, Bhattacharya and co-workers [1] claim the observation of an electrically driven room-temperature polariton laser. This is an outstanding claim. The technological solution proposed in Ref. [1] looks very interesting, and merits our close inspection. Contrary to the standard structure for polariton lasing [2,3], where a planar micro-cavity is excited through the distributed Bra...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2017
ISSN: 2158-3226
DOI: 10.1063/1.4985231