Electrical tuning of the spin–orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition

We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of insulator Al2O3. perform magneto-transport measurements and find crossover from weak localization to antilocalization effect with increasing voltage, demonstrates that the Rashba spin-orbit coupling tuned by electrode. The efficiency tuning interaction higher than those obtained for two-dimensional electron gas, as high metal-oxide-semiconductor was previously reported. discussed in line not only conventionally used one-dimensional model but also recently proposed considers effects microscopic band structures materials.