Electrical transport properties of highly doped N-type GaN materials

نویسندگان

چکیده

Abstract This paper presents a comparative study of electron transport phenomena in n-type gallium nitride strongly doped, above the Mott transition, with silicon and germanium. The samples under were grown by molecular beam epitaxy, metal-organic vapor phase epitaxy halide epitaxy. temperature dependence resistivity Hall Effect was investigated at temperatures ranging from 10 K up to 650 K. measurements sub-room allow scattering mechanisms related extrinsic material properties. observed dependences electrical properties analyzed frame model taking into account typical mechanism degree degeneracy free carrier gas. limitations applied models will be presented.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electrical transport properties of Si-doped hexagonal boron nitride epilayers

The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 · cm,...

متن کامل

Effect of growth conditions on electrical properties of Mg-doped p-GaN

In this work the effect of carrier gas and post-growth activation conditions on the electrical properties of Mg-doped p-GaN single layers grown in a vertical flow close-coupled showerhead MOCVD system is investigated. The results of Hall effect measurements show that although the optimal Mg precursor flow rate depends on the growth atmosphere and is smaller when N2 is used as a carrier gas, sim...

متن کامل

Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN

Changes in electrical as well as surface composition such as chemical and electronic properties of Mg-doped p-type GaN by phosphorus implanting are systematically investigated using Hall effect and X-ray photoelectron spectroscopy (XPS) measurements. It is shown that p-type conductivity of Mg-doped GaN can be improved by implanting P atoms after a proper post-implantation annealing treatment, p...

متن کامل

Electrical Properties Characterization of AlGaN/GaN MODFET

The electrical properties characterization of AlGaN/GaN based Modulation Doped Field Effect Transistor (MODFET) is reported. Threshold voltage Vth=-3.87 V, maximum saturation current Idss=122.748 mA, gate-source capacitance at zero gate voltage and also maximum gate-source capacitance= 0.161753 pF/μm, gate-source capacitance=0.157233 pF/μm at Id=0.3Idss, trans-conductance (gm) = 31.3806 mS/mm a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Semiconductor Science and Technology

سال: 2022

ISSN: ['0268-1242', '1361-6641']

DOI: https://doi.org/10.1088/1361-6641/ac5e01