Electrical resistivity and magnetoresistance of single-crystalTb5Si2.2Ge1.8

Electrical resistivity and magnetoresistance of single-crystal Tb5Si2.2Ge1.8

A positive colossal magnetoresistance (CMR) of 160% has been observed in Tb5Si2.2Ge1.8 with the magnetic field applied parallel to the a axis. When the magnetic field is applied parallel to the b and c axes, the magnetoresistance (MR) is less than 8% and 5%, respectively. The CMR effect originates from intrinsic crystallographic phase coexistence. The anisotropy of the MR effect is due to a uni...

ELECTRICAL RESISTIVITY OF NpTe

Morphology and electrical resistivity of metallic nanostructures

The electrical resistivity r of Au, Al and Cu films prepared by thermal evaporation with thickness range from 3 to 100 nm on glass substrates were studied. The r value was measured and theoretically evaluated by the Fuchs–Sondheimer (F–S), the Mayadas–Shatzkes (M–S), and the combined models. Measured r values in Al films were about seven times minor than for Au and Cu films for the minimum (3 n...

Resistivity dependence of magnetoresistance in Co/ZnO films

We report the dependence of magnetoresistance effect on resistivity (ρ) in Co/ZnO films deposited by magnetron sputtering at different sputtering pressures with different ZnO contents. The magnitude of the resistivity reflects different carrier transport regimes ranging from metallic to hopping behaviors. Large room-temperature magnetoresistance greater than 8% is obtained in the resistivity ra...

Electrical resistivity and tunneling anomalies in CeCuAs2

The compound CeCuAs2 is found to exhibit negative temperature (T) coefficient of electrical resistivity (ρ) under ambient pressure conditions in the entire T-range of investigation (45 mK to 300 K), even in the presence of high magnetic fields. Preliminary tunneling spectroscopic measurements indicate the existence of a psuedo-gap at least at low temperatures, thereby implying that this compoun...