Electrical Properties of Recessed Algan/Gan Schottky Diodes Under off–State Stress
نویسندگان
چکیده
منابع مشابه
Modeling of conduction properties of Schottky diodes in Polymer
(1) Université Mohamed Premier, Faculté des Sciences, Dépt de Physique, (L.E.A.A), Route Sidi Maafa BP 524, Oujda, Morocco. (2) Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS-CNRS), 7 Avenue du colonel Roche, Toulouse 31077, France. * E. mail : [email protected] This work has been supported by : •le comité Franco-Marocain ‘Action Intégrée’, N° MA/03/78, •le Programme Thématique d’Ap...
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ژورنال
عنوان ژورنال: Journal of Electrical Engineering
سال: 2014
ISSN: 1339-309X
DOI: 10.2478/jee-2014-0051