Electrical Properties of n-CdSe/Si-p Junction Prepared by Chemical Bath Deposition Technique, from Different Weights of Sodium Selenosulfate and Constant Molarity

A pn-junction was successfully fabricated by depositing n-type CdSe thin films on p-type Si as a substrate using chemical bath deposition technique (CBD) at 70oC. Time of 6 hours and the preparing solution changed every 2 during deposition. Sodium Selenosulfate (with different weights) is source Se-2 ions, cadmium nitrate Cd+2 ions. The (I-V) characteristics for n-CdSe/p-Si junction show it behaves Zener diode in reverse bias, with resistance (3 27×103)W. SEM also shows spherical-shape particles difference grain size (3.8 19.8) nm.