Electrical Characterization and Study of Current Drift Phenomena and Hysteresis Mechanism in Junctionless Ion-Sensitive Field-Effect Transistor
نویسندگان
چکیده
A comprehensive study of the drain current drift mechanism and hysteresis phenomena in fabricated p-channel junctionless ion-sensitive field-effect transistor (JL-ISFET) has been investigated for first time. The measurements have performed through transient analysis current, under different pH liquid-gate bias (Vlg). Further, time-dependent gate-capacitance (CG) also analyzed to see effect hydroxyl ions (OH?) sensing film (Al2O3). loop (7 ? 3 7 11 7) times (960s, 1500s, 1920s). It observed that JL-ISFET occurs because chemical modification film, due OH?. proposed device exhibits a threshold voltage sensitivity 58.2 mV/pH is near Nernstian limit. width maximum are measured as $\sim $ 1.3 mV 2.4 ? ( 75%), respectively.
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ژورنال
عنوان ژورنال: Silicon
سال: 2021
ISSN: ['1876-9918', '1876-990X']
DOI: https://doi.org/10.1007/s12633-021-01454-0