Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors
نویسندگان
چکیده
منابع مشابه
Electron mobility in Si delta doped GaAs
We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2015
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2015.2442293