Electric field effect thermoelectric transport in individual silicon and germanium/silicon nanowires

Electric field effect thermoelectric transport in individual silicon and germanium/silicon nanowires

We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes respectively. At room tempera...

High-field hole transport in silicon nanowires

We report on ensemble Monte Carlo hole transport simulations for small diameter silicon nanowires. The basis for the simulations is provided by band structure calculations using sp3d5s tight-binding scheme. Principal scattering mechanisms considered are hole-bulk acoustic and optical phonon interactions. Both steady-state and transient hole transport characteristics are explored. For the silico...

Improve thermoelectric efficiency of silicon nanowires

Electron and phonon transport in silicon nanowires: Atomistic approach to thermoelectric properties

Size-Dependent Transport and Thermoelectric Properties of Individual Polycrystalline Bismuth Nanowires

Thermoelectric materials convert a temperature difference into electricity and vice versa. Such materials utilize the Seebeck effect for power generation and the Peltier effect for cooling. In the Seebeck effect, a temperature difference across a material causes the diffusion of charged carriers across that gradient, thus creating a voltage difference between the hot and cold ends of the materi...