Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
نویسندگان
چکیده
منابع مشابه
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers
The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained. The phase diagrams of the superstructure change during the epitaxial growth of Sn on Si and on Ge(100) have been built. Using the phase diagram dat...
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ژورنال
عنوان ژورنال: Modern Electronic Materials
سال: 2017
ISSN: 2452-1779
DOI: 10.1016/j.moem.2017.09.006