منابع مشابه
Elastic Properties and Buckling of Silicon Nanowires
Silicon is the most important material for the electronics industry. Its unique electronic, optoelectronic, thermal, and mechanical properties have made Si an ideal choice for integrated circuits, memory devices, solar cells, and microelectromechanical systems (MEMS). Considering onedimensional (1D) nanomaterials, carbon nanotubes, silicon nanowires, and ZnO nanowires/nanobelts are the three pr...
متن کاملMagnetic Properties of Ni0.3Fe0.7 Alloy Nanowires
The effect of length variation on the magnetic properties of NiFe alloy nanowires electrodeposited into the alumina template was investigated. The diameter (45±2.5 nm) and length (~ 1.9, 7.12, 8.3, 9.5 and 13.3 µm) of the nanowires were estimated from scanning electron microscopy images. Energy dispersive spectroscopy results showed Ni3Fe7 composition of the alloy nanowire...
متن کاملElastic property of vertically aligned nanowires.
An atomic force microscopy (AFM) based technique is demonstrated for measuring the elastic modulus of individual nanowires/nanotubes aligned on a solid substrate without destructing or manipulating the sample. By simultaneously acquiring the topography and lateral force image of the aligned nanowires in the AFM contacting mode, the elastic modulus of the individual nanowires in the image has be...
متن کاملTheoretical study of elastic properties of SiC nanowires of different shapes.
The atomic structure and elastic properties of silicon carbide nanowires of different shapes and effective sizes were studied using density functional theory and classical molecular mechanics. Upon surface relaxation, surface reconstruction led to the splitting of the wire geometry, forming both hexagonal (surface) and cubic phases (bulk). The behavior of the pristine SiC wires under compressio...
متن کاملElastic properties of GaN nanowires: revealing the influence of planar defects on young's modulus at nanoscale.
The elastic properties of gallium nitride (GaN) nanowires with different structures were investigated by in situ electron microscopy in this work. The electric-field-induced resonance method was utilized to reveal that the single crystalline GaN nanowires, along [120] direction, had the similar Young's modulus as the bulk value at the diameter ranging 92-110 nm. Meanwhile, the elastic behavior ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2006
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.2194309