Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)

This paper reports on the effects of excimer laser irradiation an aluminum (Al)-doped silicon carbide (4H-SiC) layer. Specifically, high-concentration (1 × 1020 at/cm3) Al-implanted 4H-SiC samples were exposed to a few pulses 308 nm radiation (pulse duration 160 ns), with fluence varying from 1.0 2.8 J/cm2. As starting point, laser-induced modifications morphological, microstructural, and nanoelectrical properties surface monitored by combining different techniques. From these investigations, evolution morphology was observed that can be ascribed conversion during uppermost part implanted layer into polycrystalline region 3C-SiC 6H-SiC grains, surmounted in order crystalline-Si amorphous C-rich region. Then, electrical characteristics evaluated means test structures appropriately fabricated samples. The high value sheet-resistance irradiated (in 104 kΩ/sq) suggested poor activation p-type dopant and/or low mobility carriers 3C-SiC/6H-SiC outcomes this study useful for fundamental understanding annealing treatments layers, toward possible use technology process.