Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report electrical characterization of HfO2:Al2O3based metal-insulator–metal structures devised using atomic layer deposition. Dependences behavior on HfO2:Al2O3 cycle ratio is studied. An explanation for the differences between Switching properties samples proposed, based distribution HfAlOx layers sample. Dependence RS their growth temperature discussed.