Effect of substrate misorientation on the properties of p-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy

As one of the approaches to improve p-HEMT, we studied effect misorientation GaAs substrates on surface morphology, structure, and electrical properties pseudomorphic heterostructures, as well parameters transistors based them. In a single technological cycle, heterostructures were formed vicinal with (100) orientation misoriented by 2 o (110) method MOCVD (MOCVD) in cycle. It has been established that substrates, growth structurally consistent stressed epitaxial layers occurs according layered-step mechanism formation macrosteps. On monatomic steps was observed. The comparative characteristics p-HEMT obtained using two types are considered. Keywords: GaAs/InGaAs/GaAlAs epitaxy, substrate misorientation, structures