Effect of Organic / Inorganic Gate Materials on the Organic Field-Effect Transistors Performance

The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. operation the OFET depends on two essential parameters: insulation between semiconductor layer electrode capacitance insulator. In this work, electrical behavior a pentacene-based with top contact / bottom was studied. Organic polyvinyl alcohol (PVA) inorganic hafnium oxide (HfO2) were chosen as to lower voltage achieve next generation study, performance studied using monolayer bilayer insulators. To model analyze device's properties, MATLAB used. Two main parameters studied: switching ratio (Ion/Ioff) subthreshold swing (SS), well materials. PVA/HfO2 gave best results in Ion/Ioff ratio, SS transconductance 9.05´10-7, -1.52, -4.99 x10-5A/V respectively, which because has increased.