Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors
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چکیده
منابع مشابه
Effect of Mg Ionization Efficiency on Heterojunction Bipolar Transistors
A drift-diffusion transport model has been used to examine the performance capabilities of AIGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gumrnel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2000
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.126541