Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors
نویسندگان
چکیده
منابع مشابه
Black phosphorus field-effect transistors.
Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor pe...
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Linearity characteristics of hetero-gatedielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and SiO2-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and SiO2-only TFETs. It is because HG TFETs show higher transconductance (gm) and current drivability than SiO2-only...
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نتایج این مطالعه نشان می دهد که مقدار کلسیم (یونیزه و تام)، منیزیم و فسفر به طور معنی داری تغییر پیدا کرد به جزء مقدار کلسیم تام و منیزیم در روش داخل عضلانی که تغییر معنی داری نداشته است. بر اساس نتایج این مطالعه می توان نتیجه گیری کرد که اکسی تتراساکلین بر روی مقادیر سرمی کلسیم و منیزیم تأثیر می گذارد باید مقدار این کاتیون ها در بیماران، در هنگامی که اکسی تتراسایکلین استفاده می شود مورد توجه ق...
15 صفحه اولPolarized photocurrent response in black phosphorus field-effect transistors.
We investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements. Our results reveal that the photoc...
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a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2015
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4930236