Effect of Fe atomic layers at the ferromagnet–semiconductor interface on temperature-dependent spin transport in semiconductors

Using artificially controlled ferromagnet (FM)–semiconductor (SC) interfaces, we study the decay of nonlocal spin signals with increasing temperature in SC-based lateral spin-valve devices. When more than five atomic layers Fe are inserted at FM/SC temperature-dependent injection/detection efficiency ( P inj / det) can be interpreted terms T 3 2 law, meaning a model thermally excited waves FM electrodes. For interfaces insufficient insertion layers, on other hand, det is rapid curve. magneto-optical Kerr effect measurements, find that between and SC enable us to enhance ferromagnetic nature heterointerfaces. Thus, ferromagnetism ultra-thin layer just top strongly related transport We propose sufficient near interface essential for high-performance FM–SC hybrid devices above room temperature.