Effect of dopant on piezoelectric and dielectric properties of thin films Bi-=SUB=-3.25-=/SUB=-La-=SUB=-0.75-=/SUB=-Ti-=SUB=-3-x-=/SUB=-A-=SUB=-x-=/SUB=-O-=SUB=-12-=/SUB=- (A --- Mn, Zr, Nb)

نویسندگان

چکیده

It is shown that microstructure, dielectric and piezoelectric properties change in films based on lanthanum-substituted bismuth titanate (BLT) depending the alloying impurity material, which leads to changes coercive voltage, internal displacement field control coefficient. Keywords: lead-free ferroelectric films, titanate, electrophysical properties, capacitance-voltage characteristics, piezoresponse force microscopy.

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ژورنال

عنوان ژورنال: Fizika tverdogo tela

سال: 2022

ISSN: ['0367-3294', '1726-7498']

DOI: https://doi.org/10.21883/pss.2022.10.54236.376