Dynamic Circuit Model for Spintronic Devices

Spintronic Nano-Devices for Nonvolatile VLSIs

I review physics and materials science of nanoscale spintronic devices being developed for nonvolatile VLSI [1]. VLSIs can be made high performance and yet standby-power free by using magnetic tunnel junction, a two-terminal spintronic device, in combination with current CMOS technology. The scalability of perpendicular magnetic tunnel junctions utilizing CoFeB-MgO [2] is passing the 20 nm dime...

Modelling of multipurpose spintronic devices

Modelling of spin transport and spin dynamics, as a prerequisite for designing spintronic devices, is considered. Spin injection into a semiconductor under chargedepletion, chargeneutrality, and charge accumulation is investigated. The existence of amaximum spin current density in the bulk at a large spin current density at the interface in charge accumulation is related to the spin current at ...

Flexible spintronic devices on Kapton

Reconfigurable Spintronic Fabric using Domain Wall Devices

Guest Editorial — Recent Progress in Spintronic Devices

The past three decades have witnessed an explosive growth of research activities and discoveries in the area of spintronics. At their heart, spintronic device technologies are based on physical phenomena that allow electrical signals (currents and voltages) to interact directly with spins in nanomagnetic structures, i.e., where magnetic and transport properties are directly coupled. Spintronics...