Drastic change of the Casimir force at the metal-insulator transition

Critical fidelity at the metal-insulator transition.

Using a Wigner Lorentzian random matrix ensemble, we study the fidelity, F(t), of systems at the Anderson metal-insulator transition, subject to small perturbations that preserve the criticality. We find that there are three decay regimes as perturbation strength increases: the first two are associated with a Gaussian and an exponential decay, respectively, and can be described using linear res...

Quantum Criticality at the Metal Insulator Transition

We introduce a new method to analysis the many-body problem with disorder. The method is an extension of the real space renormalization group based on the operator product expansion. We consider the problem in the presence of interaction, large elastic mean free path, and finite temperatures. As a result scaling is stopped either by temperature or the length scale set by the diverging many-body...

Critical behavior of Si:P at the metal-insulator transition.

Scaling of Level Statistics at the Metal–insulator Transition

Using the Anderson model for disordered systems the fluctuations in electron spectra near the metal–insulator transition were numerically calculated for lattices of sizes up to 28 × 28 × 28 sites. The results show a finite–size scaling of both the level spacing distribution and the variance of number of states in a given energy interval, that allows to locate the critical point and to determine...

Stress Tuning of the Metal-Insulator Transition at Millikelvin Temperatures

D. V. Lang, J. Appl. Phys. 45, 3014 (1974), and 47, 3587 (1976). D. Pons and S. Makram-Ebeid, J. Phys. (Paris) 40, 1161 (1979). 3S. Makram-Ebeid, Appl. Phys. Lett. 37, 464 (1980), and in Defects in Semiconductors, edited by J. Narayan and T. Y. Tan (North-Holland, New York, 1981), Vol. 2, p. 495. S. Makram-Ebeid, G. M. Martin, and D. W. Woodard, J. Phys. Soc. Jpn. 49, 287 (1980). J. B. Oppenhei...