Double injection in graphene p-i-n structures

Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures

Device model for pulsing in silicon p-i-n structures

We report experimental data and modeling results based on device physics and circuit parameters for the spontaneous firing patterns for silicon p-i-n structures at 4.2 K controlled by a constant current source. The model provides insights into the sensitivity of the pulsing rate and explains the wide range of behavior. observed. The knowledge on the effect of these parameters on pulsing is crit...

Conductance of p-n-p graphene structures with "air-bridge" top gates.

We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap-a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realize p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density...

Disordered p-n junction in graphene

Graphene is a new material whose unique electronic structure endows it with many unusual properties [1]. A monolayer graphene is a gapless two-dimensional (2D) semiconductor with a massless electron-hole symmetric spectrum near the corners of the Brillouin zone, ǫ(k) = ±~v|k|, where v ≈ 10 cm/s. The concentration of these “Dirac” quasiparticles can be accurately controlled by the electric field...

Guided plasmons in graphene p-n junctions.

Spatial separation of electrons and holes in graphene gives rise to the existence of plasmon waves confined to the boundary region. A theory of such guided plasmon modes within hydrodynamics of electron-hole liquid is developed. For plasmon wavelengths smaller than the size of charged domains, plasmon dispersion is found to be omega proportional to q(1/4). The frequency, velocity, and direction...