Double-Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits

Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer

Magnetic Tunnel Junctions

Application of Bardeen’s tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness dependence of tunnel-polarization factors. Among the results: 1) The torque generally varies as sin θ at constant applied voltage. 2) Whenever polarization factors ar...

Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer

Magnetoresistive memory is a candidate for future universal memory because of fast switching, high density, and non-volatility. However, improvement regarding the essential parameters such as thermal stability and switching current is still needed and finding alternative architectures for magnetic cell structures is of considerable importance for the success of magnetoresistive memory. A struct...

Enhanced ferromagnetic resonance linewidth of the free layer in perpendicular magnetic tunnel junctions.

We report the frequency dependence of the ferromagnetic resonance linewidth of the free layer in magnetic tunnel junctions with all perpendicular-to-the-plane magnetized layers. While the magnetic-field-swept linewidth nominally shows a linear growth with frequency in agreement with Gilbert damping, an additional frequency-dependent linewidth broadening occurs that shows a strong asymmetry betw...

Magnetic Tunnel Junctions

Figure 1 Schematic illustration showing the mechanism of TMR. Top: for parallel aligned magnetization as sketched at left, electrons around the Fermi level with spin up (m) and spin down (k) are allowed to tunnel from majority to majority bands, and from minority to minority bands. Bottom: when the magnetization is antiparallel, tunneling takes place from majority to minority and minority to ma...