Direct writing of divacancy centers in silicon carbide by femtosecond laser irradiation and subsequent thermal annealing

Divacancy (VSiVC) centers in silicon carbide (SiC) have potential applications quantum communication and sensing due to their attractive optical spin properties. To realize many of these divacancy-based applications, it is vital that they are created prescribed locations with high accuracy. Here, we describe the production arrays divacancy 4H polytype SiC (4H-SiC) by femtosecond laser irradiation subsequent thermal annealing. We optically characterized photoluminescence (PL) confocal mapping using a custom-built microscope. The show bright stable emission depends on pulse energy laser. PL spectra were collected micro-Raman spectroscopy at low temperature 4.2 K room temperature. effect annealing was studied various temperatures from 500 °C 1000 showed maximum center intensity achieved 800 °C. These aforementioned measurements writing method enables be accurately positioned 4H-SiC.