Direct Synthesis of Multi-layer MoS\(_2\) Nanodots by Chemical Vapor Deposition
نویسندگان
چکیده
منابع مشابه
Single- and few-layer graphene growth on stainless steel substrates by direct thermal chemical vapor deposition.
Increasing interest in graphene research in basic sciences and applications emphasizes the need for an economical means of synthesizing it. We report a method for the synthesis of graphene on commercially available stainless steel foils using direct thermal chemical vapor deposition. Our method of synthesis and the use of relatively cheap precursors such as ethanol (CH(3)CH(2)OH) as a source of...
متن کاملSynthesis of few-layer hexagonal boron nitride thin film by chemical vapor deposition.
In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 μm in late...
متن کاملDirect synthesis of single-walled carbon nanotubes bridging metal electrodes by laser-assisted chemical vapor deposition
Direct synthesis of single-walled carbon nanotubes SWNTs bridging prepatterned Mo electrodes has been achieved using laser-assisted chemical vapor deposition LCVD . The synthesized SWNTs are found predominantly semiconducting. By controlling the spot size of the focused laser beam, synthesis of SWNTs can be achieved in a localized manner, which is governed by the thermal and optical properties ...
متن کاملDirect chemical vapor deposition of graphene on dielectric surfaces.
Direct deposition of graphene on various dielectric substrates is demonstrated using a single-step chemical vapor deposition process. Single-layer graphene is formed through surface catalytic decomposition of hydrocarbon precursors on thin copper films predeposited on dielectric substrates. The copper films dewet and evaporate during or immediately after graphene growth, resulting in graphene d...
متن کاملThe reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition
Thin-film Si grows layer by layer on Si(001)-(2 × 1):H in plasma-enhanced chemical vapor deposition. Here we investigate the reason why this occurs by using quantum chemical molecular dynamics and density functional theory calculations. We propose a dangling bond (DB) diffusion model as an alternative to the SiH3 diffusion model, which is in conflict with first-principles calculation results an...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Communications in Physics
سال: 2018
ISSN: 0868-3166,0868-3166
DOI: 10.15625/0868-3166/28/4/12650