Direct Synthesis of Hyperdoped Germanium Nanowires
نویسندگان
چکیده
منابع مشابه
Direct Synthesis of Hyperdoped Germanium Nanowires
A low-temperature chemical vapor growth of Ge nanowires using Ga as seed material is demonstrated. The structural and chemical analysis reveals the homogeneous incorporation of ∼3.5 at. % Ga in the Ge nanowires. The Ga-containing Ge nanowires behave like metallic conductors with a resistivity of about ∼300 μΩcm due to Ga hyperdoping with electronic contributions of one-third of the incorporated...
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ژورنال
عنوان ژورنال: ACS Nano
سال: 2018
ISSN: 1936-0851,1936-086X
DOI: 10.1021/acsnano.7b07248